MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch (Record no. 58600)
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000 -LEADER | |
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fixed length control field | 03250nam a22005055i 4500 |
001 - CONTROL NUMBER | |
control field | 978-3-319-01165-3 |
005 - DATE AND TIME OF LATEST TRANSACTION | |
control field | 20200421112546.0 |
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
fixed length control field | 131007s2014 gw | s |||| 0|eng d |
020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
ISBN | 9783319011653 |
-- | 978-3-319-01165-3 |
082 04 - CLASSIFICATION NUMBER | |
Call Number | 621.3815 |
100 1# - AUTHOR NAME | |
Author | Srivastava, Viranjay M. |
245 10 - TITLE STATEMENT | |
Title | MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch |
300 ## - PHYSICAL DESCRIPTION | |
Number of Pages | XV, 199 p. 55 illus., 45 illus. in color. |
490 1# - SERIES STATEMENT | |
Series statement | Analog Circuits and Signal Processing, |
505 0# - FORMATTED CONTENTS NOTE | |
Remark 2 | Introduction -- Design of Double-Pole Four-Throw RF Switch -- Design of Double-Gate MOSFET -- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET -- Cylindrical Surrounding Double-Gate RF MOSFET -- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch -- Testing of MOSFET Surfaces Using Image Acquisition -- Conclusions and Future Scope. |
520 ## - SUMMARY, ETC. | |
Summary, etc | This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET.  The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET  is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.  �         Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET; �         Explains the design of RF switches using the technologies presented and simulates switches; �         Verifies parameters and discusses feasibility of devices and switches. |
700 1# - AUTHOR 2 | |
Author 2 | Singh, Ghanshyam. |
856 40 - ELECTRONIC LOCATION AND ACCESS | |
Uniform Resource Identifier | http://dx.doi.org/10.1007/978-3-319-01165-3 |
942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
Koha item type | eBooks |
264 #1 - | |
-- | Cham : |
-- | Springer International Publishing : |
-- | Imprint: Springer, |
-- | 2014. |
336 ## - | |
-- | text |
-- | txt |
-- | rdacontent |
337 ## - | |
-- | computer |
-- | c |
-- | rdamedia |
338 ## - | |
-- | online resource |
-- | cr |
-- | rdacarrier |
347 ## - | |
-- | text file |
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-- | rda |
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
-- | Engineering. |
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
-- | Semiconductors. |
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
-- | Electrical engineering. |
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
-- | Electronic circuits. |
650 14 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
-- | Engineering. |
650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
-- | Circuits and Systems. |
650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
-- | Communications Engineering, Networks. |
650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
-- | Semiconductors. |
830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE | |
-- | 1872-082X ; |
912 ## - | |
-- | ZDB-2-ENG |
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