Epitaxial graphene on silicon carbide : (Record no. 70542)
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| 000 -LEADER | |
|---|---|
| fixed length control field | 03773cam a2200349Ii 4500 |
| 001 - CONTROL NUMBER | |
| control field | 9781315186146 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 180706t20182018si ad ob 001 0 eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 9781315186146 |
| -- | (e-book : PDF) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 9781351736206 |
| -- | (e-book: Mobi) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| -- | (hardback) |
| 082 04 - CLASSIFICATION NUMBER | |
| Call Number | 547.61 |
| -- | E643 |
| 245 00 - TITLE STATEMENT | |
| Title | Epitaxial graphene on silicon carbide : |
| Sub Title | modelling, characterization, and applications / |
| 300 ## - PHYSICAL DESCRIPTION | |
| Number of Pages | 1 online resource (xiii, 199 pages) |
| 520 ## - SUMMARY, ETC. | |
| Summary, etc | "This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It addresses comprehensively all aspects relevant for the study and technology development of EG materials and their applications. It includes the state of the art on the synthesis of EG-SiC, which is profusely explained as a function of SiC substrate characteristics, such as polytype, polarity, and wafer cut, as well as both in situ and ex situ conditioning techniques, including H2 pre-deposition annealing, chemical mechanical polishing, etc. It generously describes growth studies including the most popular techniques for high quality and controlled deposition such as ultrahigh vacuum-processing, partial-pressure, or graphite cap controlled-sublimation techniques. The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia."--Provided by publisher. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| General subdivision | Electric properties. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| General subdivision | Materials. |
| 700 1# - AUTHOR 2 | |
| Author 2 | Godignon, Philippe, |
| 700 1# - AUTHOR 2 | |
| Author 2 | Rius, Gemma, |
| 856 40 - ELECTRONIC LOCATION AND ACCESS | |
| Uniform Resource Identifier | https://www.taylorfrancis.com/books/9781315186146 |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
| Koha item type | eBooks |
| 264 #1 - | |
| -- | Singapore : |
| -- | Pan Stanford Publishing, |
| -- | [2018] |
| 264 #4 - | |
| -- | ©2018 |
| 336 ## - | |
| -- | text |
| -- | rdacontent |
| 337 ## - | |
| -- | computer |
| -- | rdamedia |
| 338 ## - | |
| -- | online resource |
| -- | rdacarrier |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Graphene |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Nanoelectronics |
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