NAND flash memory technologies / (Record no. 74434)

000 -LEADER
fixed length control field 04432nam a2200685 i 4500
001 - CONTROL NUMBER
control field 7394658
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20220712205925.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 160307s2008 njua ob 001 eng d
019 ## -
-- 932097299
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 9781119132639
-- electronic bk.
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
-- print
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
-- electronic bk.
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
-- electronic bk.
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
-- electronic bk.
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
-- electronic bk.
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
-- electronic bk.
082 04 - CLASSIFICATION NUMBER
Call Number 004.5
100 1# - AUTHOR NAME
Author Aritome, Seiichi,
245 10 - TITLE STATEMENT
Title NAND flash memory technologies /
300 ## - PHYSICAL DESCRIPTION
Number of Pages 1 PDF (xx, 410 pages) :
490 1# - SERIES STATEMENT
Series statement IEEE press series on microelectronic systems
505 0# - FORMATTED CONTENTS NOTE
Remark 2 Principle of NAND flash memory -- NAND flash memory devices -- Advanced operation for multilevel cell -- Scaling challenge of NAND flash memory cells -- Reliability of NAND flash memory -- Three-dimensional NAND flash cell -- Challenges of NAND flash memory.
520 ## - SUMMARY, ETC.
Summary, etc Examines the history, basic structure, and processes of NAND flash memory This book discusses basic and advanced NAND flash memory technologies, including the principle of NAND flash, memory cell technologies, multi-bits cell technologies, scaling challenges of memory cell, reliability, and 3-dimensional cell as the future technology. Chapter 1 describes the background and early history of NAND flash. The basic device structures and operations are described in Chapter 2. Next, the author discusses the memory cell technologies focused on scaling in Chapter 3, and introduces the advanced operations for multi-level cells in Chapter 4. The physical limitations for scaling are examined in Chapter 5, and Chapter 6 describes the reliability of NAND flash memory. Chapter 7 examines 3-dimensional (3D) NAND flash memory cells and discusses the pros and cons in structure, process, operations, scalability, and performance. In Chapter 8, challenges of 3D NAND flash memory are discussed. Finally, in Chapter 9, the author summarizes and describes the prospect of technologies and market for the future NAND flash memory. . Offers a comprehensive overview of NAND flash memories, with insights into NAND history, technology, challenges, evolutions, and perspectives. Describes new program disturb issues, data retention, power consumption, and possible solutions for the challenges of 3D NAND flash memory . Written by an authority in NAND flash memory technology, with over 25 years' experience NAND Flash Memory Technologies is a reference for engineers, researchers, and designers who are engaged in the development of NAND flash memory or SSD (Solid State Disk) and flash memory systems.
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
Subject Flash memories (Computers)
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
Subject Computer storage devices.
650 #7 - SUBJECT ADDED ENTRY--SUBJECT 1
Subject Computer storage devices.
650 #7 - SUBJECT ADDED ENTRY--SUBJECT 1
Subject Flash memories (Computers)
856 42 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier https://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=7394658
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type eBooks
264 #1 -
-- Hoboken, New Jersey :
-- Wiley,
-- [2016]
264 #2 -
-- [Piscataqay, New Jersey] :
-- IEEE Xplore,
-- [2015]
336 ## -
-- text
-- rdacontent
337 ## -
-- electronic
-- isbdmedia
338 ## -
-- online resource
-- rdacarrier
588 0# -
-- Online resource; title from PDF title page (EBSCO, viewed December 22, 2015)
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-- Epitaxial layers
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-- Excitons
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-- Nitrogen
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-- Radiative recombination
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-- Silicon carbide
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-- Temperature measurement

No items available.