Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion (Record no. 78850)
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| 000 -LEADER | |
|---|---|
| fixed length control field | 03612nam a22005415i 4500 |
| 001 - CONTROL NUMBER | |
| control field | 978-3-319-77994-2 |
| 005 - DATE AND TIME OF LATEST TRANSACTION | |
| control field | 20220801220713.0 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 180512s2018 sz | s |||| 0|eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 9783319779942 |
| -- | 978-3-319-77994-2 |
| 082 04 - CLASSIFICATION NUMBER | |
| Call Number | 621.3815 |
| 245 10 - TITLE STATEMENT | |
| Title | Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion |
| 250 ## - EDITION STATEMENT | |
| Edition statement | 1st ed. 2018. |
| 300 ## - PHYSICAL DESCRIPTION | |
| Number of Pages | XIII, 232 p. 183 illus., 165 illus. in color. |
| 490 1# - SERIES STATEMENT | |
| Series statement | Integrated Circuits and Systems, |
| 505 0# - FORMATTED CONTENTS NOTE | |
| Remark 2 | Chapter1: Taking the next step in GaN: bulk GaN substrates and GaN-on-Si epitaxy for electronics -- Chapter2: Lateral GaN HEMT structures -- Chapter3: Vertical GaN Transistors for Power Electronics -- Chapter4: Reliability of GaN-based Power devices -- Chapter5: Validating GaN robustness -- Chapter6: Impact of Parasitics on GaN Based Power Conversion -- Chapter7: GaN in AC/DC Power Converters -- Chapter8: GaN in Switched Mode Power Amplifiers. |
| 520 ## - SUMMARY, ETC. | |
| Summary, etc | This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies. |
| 700 1# - AUTHOR 2 | |
| Author 2 | Meneghesso, Gaudenzio. |
| 700 1# - AUTHOR 2 | |
| Author 2 | Meneghini, Matteo. |
| 700 1# - AUTHOR 2 | |
| Author 2 | Zanoni, Enrico. |
| 856 40 - ELECTRONIC LOCATION AND ACCESS | |
| Uniform Resource Identifier | https://doi.org/10.1007/978-3-319-77994-2 |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
| Koha item type | eBooks |
| 264 #1 - | |
| -- | Cham : |
| -- | Springer International Publishing : |
| -- | Imprint: Springer, |
| -- | 2018. |
| 336 ## - | |
| -- | text |
| -- | txt |
| -- | rdacontent |
| 337 ## - | |
| -- | computer |
| -- | c |
| -- | rdamedia |
| 338 ## - | |
| -- | online resource |
| -- | cr |
| -- | rdacarrier |
| 347 ## - | |
| -- | text file |
| -- | |
| -- | rda |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Electronic circuits. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Optical materials. |
| 650 14 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Electronic Circuits and Systems. |
| 650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Optical Materials. |
| 830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE | |
| -- | 1558-9420 |
| 912 ## - | |
| -- | ZDB-2-ENG |
| 912 ## - | |
| -- | ZDB-2-SXE |
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