MOS devices for low-voltage and low-energy applications - Omura, Y. (Yasuhisa); Mallik, Abhijit; Matsuo, N. (Naoto); IEEE Xplore (Online Service); Wiley (Singapore ; Hoboken, NJ : John Wiley & Sons, 2017)
35.5 Summary 429 -- References 430 -- 36 Gate‐on‐Germanium Source Tunnel Field‐Effect Transistor Enabling Sub‐0.5‐V Operation 431 -- 36.1 Introduction 431 -- 36.2 Proposed Device Structure 431 -- 36.3 Simulation Setup 432 -- 36.4 Results and Discussion 434 -- 36.4.1 Device Characteristics 434 -- 36.4.2 Effects of Different Structural Parameters 435 -- 36.4.3 Optimization of Different Structural Parameters 436 -- 36.5 Summary 445 -- References 445 -- Part VIII PROSPECTS OF LOW‐ENERGY DEVICE TECHNOLOLGY AND APPLICATIONS 447 -- 37 Performance Comparison of Modern Devices 449 -- References 450 -- 38 Emerging Device Technology and the Future of MOSFET 452 -- 38.1 Studies to Realize High‐Performance MOSFETs based on Unconventional Materials 452 -- 38.2 Challenging Studies to Realize High‐Performance MOSFETs based on the Nonconventional Doctrine 453 -- References 454 -- 39 How Devices Are and Should Be Applied to Circuits 456 -- 39.1 Past Approach 456 -- 39.2 Latest Studies 456 -- References 457 -- 40 Prospects for Low‐Energy Device Technology and Applications 458 -- References 459 -- Bibliography 460 -- Index 463.
Includes bibliographical references and index.
Also available in print.
Mode of access: World Wide Web
Description based on PDF viewed 01/18/2017.
Keywords: Metal oxide semiconductors; Metal oxide semiconductor field-effect transistors; Low voltage integrated circuits; Low voltage systems -- Industrial applications; Electronic books