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TFET Integrated Circuits [electronic resource] : From Perspective Towards Reality / by Navneet Gupta, Adam Makosiej, Amara Amara, Andrei Vladimirescu, Costin Anghel.

By: Gupta, Navneet [author.].
Contributor(s): Makosiej, Adam [author.] | Amara, Amara [author.] | Vladimirescu, Andrei [author.] | Anghel, Costin [author.] | SpringerLink (Online service).
Material type: materialTypeLabelBookPublisher: Cham : Springer International Publishing : Imprint: Springer, 2021Edition: 1st ed. 2021.Description: XV, 139 p. 129 illus., 104 illus. in color. online resource.Content type: text Media type: computer Carrier type: online resourceISBN: 9783030551193.Other title: a.Subject(s): Electronic circuits | Electronics | Electronic Circuits and Systems | Electronics and Microelectronics, InstrumentationAdditional physical formats: Printed edition:: No title; Printed edition:: No title; Printed edition:: No titleDDC classification: 621.3815 Online resources: Click here to access online
Contents:
Introduction -- State of the art -- TFET circuits -- Extension of TFET architectures to present CMOS technology -- System Architectures -- Conclusion & Future Perspective.
In: Springer Nature eBookSummary: This book describes the physical operation of the Tunnel Field-effect Transistor (TFET) and circuits built with this device. Whereas the majority of publications on TFETs describe in detail the device, its characteristics, variants and performance, this will be the first book addressing TFET integrated circuits (TFET ICs). The authors describe the peculiarities of TFET ICs and their differences with MOSFETs. They also develop and analyze a number of logic circuits and memories. The discussion also includes complex circuits combining CMOS and TFET, as well as a potential fabrication process in Silicon. Provides readers with a realistic view of a potential future path of higher-scale integration of circuits and systems; Discusses the advantages and disadvantages of TFETs vs. CMOS for different applications; Describes methodology to combine two types of devices on the same Silicon substrate to benefit from the speed of CMOS and the low leakage of TFETs and demonstrates the performance and integration gain of the two devices complementing each other.
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Introduction -- State of the art -- TFET circuits -- Extension of TFET architectures to present CMOS technology -- System Architectures -- Conclusion & Future Perspective.

This book describes the physical operation of the Tunnel Field-effect Transistor (TFET) and circuits built with this device. Whereas the majority of publications on TFETs describe in detail the device, its characteristics, variants and performance, this will be the first book addressing TFET integrated circuits (TFET ICs). The authors describe the peculiarities of TFET ICs and their differences with MOSFETs. They also develop and analyze a number of logic circuits and memories. The discussion also includes complex circuits combining CMOS and TFET, as well as a potential fabrication process in Silicon. Provides readers with a realistic view of a potential future path of higher-scale integration of circuits and systems; Discusses the advantages and disadvantages of TFETs vs. CMOS for different applications; Describes methodology to combine two types of devices on the same Silicon substrate to benefit from the speed of CMOS and the low leakage of TFETs and demonstrates the performance and integration gain of the two devices complementing each other.

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