000 04238nam a22004695i 4500
001 978-94-017-7512-0
003 DE-He213
005 20200420220219.0
007 cr nn 008mamaa
008 160526s2016 ne | s |||| 0|eng d
020 _a9789401775120
_9978-94-017-7512-0
024 7 _a10.1007/978-94-017-7512-0
_2doi
050 4 _aTK7895.M4
072 7 _aUKS
_2bicssc
072 7 _aUYF
_2bicssc
072 7 _aCOM067000
_2bisacsh
082 0 4 _a004.53
_223
245 1 0 _a3D Flash Memories
_h[electronic resource] /
_cedited by Rino Micheloni.
264 1 _aDordrecht :
_bSpringer Netherlands :
_bImprint: Springer,
_c2016.
300 _aXXII, 380 p. 396 illus., 304 illus. in color.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
505 0 _aDedication Page -- Foreword -- Preface -- Introduction -- About the Editor -- Acknowledgements -- 1 The Business of NAND -- 2 Reliability of 3D NAND Flash memories -- 3 3D Stacked NAND Flash memories -- 4 3D Charge Trap NAND Flash memories -- 5 3D Floating Gate NAND Flash memories -- 6 Advanced Architectures for 3D NAND Flash memories with vertical channel -- 7 3D VG-Type NAND Flash memories -- 8 RRAM Cross-point arrays -- 9 3D Multi-Chip Integration and Packaging Technology -- 10 BCH and LDPC Error Correction Codes for NAND Flash memories -- 11 Advanced algebraic and graph-based ECC schemes for modern NVMs -- 12 System-Level Considerations on Design of 3D NAND Flash memories -- Index.
520 _aThis book walks the reader through the next step in the evolution of NAND flash memory technology, namely the development of 3D flash memories, in which multiple layers of memory cells are grown within the same piece of silicon. It describes their working principles, device architectures, fabrication techniques and practical implementations, and highlights why 3D flash is a brand new technology. After reviewing market trends for both NAND and solid state drives (SSDs), the book digs into the details of the flash memory cell itself, covering both floating gate and emerging charge trap technologies. There is a plethora of different materials and vertical integration schemes out there. New memory cells, new materials, new architectures (3D Stacked, BiCS and P-BiCS, 3D FG, 3D VG, 3D advanced architectures); basically, each NAND manufacturer has its own solution. Chapter 3 to chapter 7 offer a broad overview of how 3D can materialize. The 3D wave is impacting emerging memories as well and chapter 8 covers 3D RRAM (resistive RAM) crosspoint arrays. Visualizing 3D structures can be a challenge for the human brain: this is way all these chapters contain a lot of bird's-eye views and cross sections along the 3 axes. The second part of the book is devoted to other important aspects, such as advanced packaging technology (i.e. TSV in chapter 9) and error correction codes, which have been leveraged to improve flash reliability for decades. Chapter 10 describes the evolution from legacy BCH to the most recent LDPC codes, while chapter 11 deals with some of the most recent advancements in the ECC field. Last but not least, chapter 12 looks at 3D flash memories from a system perspective. Is 14nm the last step for planar cells? Can 100 layers be integrated within the same piece of silicon? Is 4 bit/cell possible with 3D? Will 3D be reliable enough for enterprise and datacenter applications? These are some of the questions that this book helps answering by providing insights into 3D flash memory design, process technology and applications.
650 0 _aComputer science.
650 0 _aComputer memory systems.
650 0 _aElectronic circuits.
650 1 4 _aComputer Science.
650 2 4 _aMemory Structures.
650 2 4 _aElectronic Circuits and Devices.
650 2 4 _aCircuits and Systems.
700 1 _aMicheloni, Rino.
_eeditor.
710 2 _aSpringerLink (Online service)
773 0 _tSpringer eBooks
776 0 8 _iPrinted edition:
_z9789401775106
856 4 0 _uhttp://dx.doi.org/10.1007/978-94-017-7512-0
912 _aZDB-2-SCS
942 _cEBK
999 _c51823
_d51823