000 | 04633nam a2200961 i 4500 | ||
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001 | 5271158 | ||
003 | IEEE | ||
005 | 20200421114116.0 | ||
006 | m o d | ||
007 | cr |n||||||||| | ||
008 | 151221s2001 njua ob 001 eng d | ||
020 |
_a9780470547182 _qelectronic |
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020 |
_z9780471396970 _qprint |
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020 |
_z0470547189 _qelectronic |
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024 | 7 |
_a10.1109/9780470547182 _2doi |
|
035 | _a(CaBNVSL)mat05271158 | ||
035 | _a(IDAMS)0b000064810cc8d4 | ||
040 |
_aCaBNVSL _beng _erda _cCaBNVSL _dCaBNVSL |
||
050 | 4 |
_aTK7874 _b.L58 2001eb |
|
082 | 0 | 4 |
_a621.3815/31 _222 |
082 | 0 | 4 |
_a621.38150285 _222 |
100 | 1 |
_aLiu, William, _eauthor. |
|
245 | 1 | 0 |
_aMosfet models for spice simulation, including BSIM3v3 and BSIM4 / _cWilliam Liu. |
264 | 1 |
_a[Hoboken, New Jersey] : _bWiley-Interscience Publication, _cc2001. |
|
264 | 2 |
_a[Piscataqay, New Jersey] : _bIEEE Xplore, _c[2001] |
|
300 |
_a1 PDF (xii, 588 pages) : _billustrations. |
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336 |
_atext _2rdacontent |
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337 |
_aelectronic _2isbdmedia |
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338 |
_aonline resource _2rdacarrier |
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504 | _aIncludes bibliographical references and index. | ||
505 | 0 | _aModeling jargons -- Basic facts about BSIM3 -- BSIM3 parameters -- Improvable areas of BSIM3 -- Improvements in BSIM4. | |
506 | 1 | _aRestricted to subscribers or individual electronic text purchasers. | |
520 | _aAn expert guide to understanding and making optimum use of BSIM Used by more chip designers worldwide than any other comparable model, the Berkeley Short-Channel IGFET Model (BSIM) has, over the past few years, established itself as the de facto standard MOSFET SPICE model for circuit simulation and CMOS technology development. Yet, until now, there have been no independent expert guides or tutorials to supplement the various BSIM manuals currently available. Written by a noted expert in the field, this book fills that gap in the literature by providing a comprehensive guide to understanding and making optimal use of BSIM3 and BSIM4. Drawing upon his extensive experience designing with BSIM, William Liu provides a brief history of the model, discusses the various advantages of BSIM over other models, and explores the reasons why BSIM3 has been adopted by the majority of circuit manufacturers. He then provides engineers with the detailed practical information and guidance they need to master all of BSIM's features. He: * Summarizes key BSIM3 components * Represents the BSIM3 model with equivalent circuits for various operating conditions * Provides a comprehensive glossary of modeling terminology * Lists alphabetically BSIM3 parameters along with their meanings and relevant equations * Explores BSIM3's flaws and provides improvement suggestions * Describes all of BSIM4's improvements and new features * Provides useful SPICE files, which are available online at the Wiley ftp site. | ||
530 | _aAlso available in print. | ||
538 | _aMode of access: World Wide Web | ||
588 | _aDescription based on PDF viewed 12/21/2015. | ||
630 | 0 | 0 | _aSPICE (Computer file) |
650 | 0 |
_aIntegrated circuits _xDesign and construction. |
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650 | 0 | _aElectronic circuit design. | |
655 | 0 | _aElectronic books. | |
695 | _aAnalytical models | ||
695 | _aApproximation methods | ||
695 | _aArtificial neural networks | ||
695 | _aCapacitance | ||
695 | _aCapacitance measurement | ||
695 | _aCapacitance-voltage characteristics | ||
695 | _aCapacitors | ||
695 | _aConformal mapping | ||
695 | _aConvergence | ||
695 | _aDifferential equations | ||
695 | _aDoping profiles | ||
695 | _aElectric fields | ||
695 | _aElectric potential | ||
695 | _aEquations | ||
695 | _aEquivalent circuits | ||
695 | _aHEMTs | ||
695 | _aIndexes | ||
695 | _aIntegrated circuit modeling | ||
695 | _aJunctions | ||
695 | _aLogic gates | ||
695 | _aMESFETs | ||
695 | _aMODFETs | ||
695 | _aMOS devices | ||
695 | _aMOSFETs | ||
695 | _aManuals | ||
695 | _aMathematical model | ||
695 | _aNoise | ||
695 | _aNoise figure | ||
695 | _aNoise measurement | ||
695 | _aNumerical models | ||
695 | _aResistance | ||
695 | _aRobustness | ||
695 | _aSPICE | ||
695 | _aTemperature | ||
695 | _aThreshold voltage | ||
695 | _aTransient analysis | ||
695 | _aTransistors | ||
710 | 2 |
_aJohn Wiley & Sons, _epublisher. |
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710 | 2 |
_aIEEE Xplore (Online service), _edistributor. |
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776 | 0 | 8 |
_iPrint version: _z9780471396970 |
856 | 4 | 2 |
_3Abstract with links to resource _uhttp://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=5271158 |
942 | _cEBK | ||
999 |
_c59542 _d59542 |