| 000 | 04490cam a2200325Ii 4500 | ||
|---|---|---|---|
| 001 | 9781315221137 | ||
| 008 | 180706s2006 flua ob 001 0 eng d | ||
| 020 |
_a9781315221137 _q(e-book : PDF) |
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| 020 |
_a9781315221137 _q(e-book) |
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| 020 |
_a9781351828338 _q(e-book: Mobi) |
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| 020 |
_z9780849335594 _q(hardback) |
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| 024 | 7 |
_a10.1201/9781315221137 _2doi |
|
| 035 | _a(OCoLC)704438431 | ||
| 040 |
_aFlBoTFG _cFlBoTFG _erda |
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| 050 | 4 |
_aTK7871.96.B55 _bS55 2005 |
|
| 082 | 0 | 4 |
_a621.381528 _bS583 |
| 245 | 0 | 0 |
_aSilicon heterostructure handbook : _bmaterials, fabrication, devices, circuits, and applications of SiGe and Si strained-layer epitaxy / _cedited byJohn D. Cressler. |
| 264 | 1 |
_aBoca Raton, FL : _bCRC Taylor & Francis, _c2006. |
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| 300 | _a1 online resource (1248 pages) | ||
| 336 |
_atext _2rdacontent |
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| 337 |
_acomputer _2rdamedia |
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| 338 |
_aonline resource _2rdacarrier |
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| 505 | 0 | _achapter Introduction -- chapter The Big Picture -- chapter A Brief History of the Field -- chapter Strained SiGe and Si Epitaxy -- chapter Si-SiGe(C) Epitaxy by RTCVD -- chapter MBE Growth Techniques -- chapter UHV/CVD Growth Techniques -- chapter Defects and Diffusion in SiGe and Strained Si -- chapter Stability Constraints in SiGe Epitaxy -- chapter Electronic Properties of Strained Si/SiGe and Si Cy Alloys -- chapter Carbon Doping of SiGe -- chapter Fabrication of SiGe HBT BiCMOS Technology -- chapter Overview: Fabrication of SiGe HBT BiCMOS Technology -- chapter Device Structures and BiCMOS Integration -- chapter SiGe HBTs on CMOS-Compatible SOI -- chapter Passive Components -- chapter Industry Examples at the State-of-the-Art: IBM -- chapter Industry Examples at the State-of-the-Art: Jazz -- chapter Industry Examples at the State-of-the-Art: Hitachi -- chapter Industry Examples at the State-of-the-Art: Infineon -- chapter Industry Examples at theState-of-the-Art: IHP -- chapter SiGe HBTs -- chapter Overview: SiGe HBTs -- chapter Device Physics -- chapter Second-Order Effects -- chapter Low-Frequency Noise -- chapter Broadband Noise -- chapter Microscopic Noise Simulation -- chapter Linearity -- chapter pnp SiGe HBTs -- chapter Temperature Effects -- chapter Heterostructure FETs -- chapter Overview: Heterostructure FETs -- chapter Biaxial Strained Si CMOS -- chapter Uniaxial Stressed Si MOSFET -- chapter SiGe-Channel HFETs -- chapter Industry Examples at the State-of-the-Art: Intel's 90 nm Logic Technologies -- chapter Other Heterostructure Devices -- chapter Overview: Other Heterostructure Devices -- chapter Resonant Tunneling Devices -- chapter IMPATT Diodes -- chapter Engineered Substrates for Electronic and Optoelectronic Systems -- chapter Self-Assembling Nanostructures in Ge(Si)-Si Heteroepitaxy -- chapter Optoelectronic Components -- chapter Overview: Optoelectronic Components -- chapter Si-SiGe LEDs -- chapter Near-Infrared Detectors -- chapter Si-Based Photonic Transistor Devices for Integrated Optoelectronics -- chapter Si-SiGe Quantum Cascade Emitters -- chapter Measurement and Modeling -- chapter Overview: Measurement and Modeling -- chapter Best-Practice AC Measurement Techniques -- chapter Industrial Application of TCAD for SiGe Development -- chapter Compact Modeling of SiGe HBTs: HICUM -- chapter Compact Modeling of SiGe HBTs: Mextram -- chapter CAD Tools and Design Kits -- chapter Parasitic Modeling and Noise Mitigation Approaches in Silicon Germanium RF Designs -- chapter Transmission Lines on Si -- chapter Improved De-Embedding Techniques -- chapter Circuits and Applications -- chapter Overview: Circuits and Applications -- chapter SiGe as an Enabler for Wireless Communications Systems* -- chapter LNA Optimization Strategies -- chapter Linearization Techniques -- chapter SiGe MMICs -- chapter SiGe Millimeter-Wave ICs -- chapter Wireless Building Blocks Using SiGe HBTs -- chapter Direct Conversion Architectures for SiGe Radios -- chapter RF MEMS Techniques in Si/SiGe -- part Appendices -- chapter Properties of Silicon and Germanium -- chapter The Generalized Moll-Ross Relations -- chapter Integral Charge-Control Relations -- chapter Sample SiGe HBT Compact Model Parameters. | |
| 650 | 0 |
_aBipolar transistors _vHandbooks, manuals, etc. _914056 |
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| 650 | 0 |
_aSilicon _vHandbooks, manuals, etc. _914057 |
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| 700 | 1 |
_aCressler, John D. _914058 |
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| 776 | 0 | 8 |
_iPrint version: _z9780849335594 |
| 856 | 4 | 0 |
_uhttps://www.taylorfrancis.com/books/9781420026580 _zClick here to view. |
| 942 | _cEBK | ||
| 999 |
_c70599 _d70599 |
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