000			02114cam a22004938i 4500
001			9781003121589
003			FlBoTFG
005			20220711212454.0
006			m o d
007			cr |||||||||||
008			210617s2021 flu ob 001 0 eng
040			_aOCoLC-P _beng _erda _cOCoLC-P
020			_a9781003121589 _q(ebook)
020			_a1003121586
020			_a9781000438819 _q(electronic bk.)
020			_a1000438813 _q(electronic bk.)
020			_a9781000438789 _q(PDF ebook)
020			_a1000438783
020			_z9780367639686 _q(hardback)
020			_z9780367639693 _q(paperback)
020			_z0367639688
024	7		_a10.1201/9781003121589 _2doi
035			_a(OCoLC)1262641114
035			_a(OCoLC-P)1262641114
050	0	0	_aQD551
072		7	_aTEC _x008070 _2bisacsh
072		7	_aTJF _2bicssc
082	0	0	_a537/.24 _223
245	0	0	_aHigh-k Materials in Multi-Gate FET Devices / _cedited by Shubham Tayal, Parveen Singla, and J. Paulo Davim.
264		1	_aBoca Raton : _bCRC Press, _c2021.
300			_a1 online resource
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
490	0		_aScience, technology, and management
520			_a"This book focuses on high-k materials for advanced FET devices. It discusses emerging challenges in the engineering and applications and considers issues with associated technologies. This work will be of high interest to researchers in materials science, electronics engineering, IT, and related disciplines studying nanodevices such as FinFET and Tunnel FET and device-circuit codesign issues"-- _cProvided by publisher.
588			_aOCLC-licensed vendor bibliographic record.
650		0	_aElectrochemistry. _97937
650		7	_aTECHNOLOGY / Electronics / Microelectronics _2bisacsh _910944
700	1		_aTayal, Shubham, _eeditor. _916841
856	4	0	_3Taylor & Francis _uhttps://www.taylorfrancis.com/books/9781003121589
856	4	2	_3OCLC metadata license agreement _uhttp://www.oclc.org/content/dam/oclc/forms/terms/vbrl-201703.pdf
942			_cEBK
999			_c71355 _d71355