000 | 01849cam a2200301Ii 4500 | ||
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001 | 9781315216690 | ||
008 | 180331s2013 fluad ob 001 0 eng d | ||
020 |
_a9781315216690 _q(e-book : PDF) |
||
020 |
_a9781351823890 _q(e-book: Mobi) |
||
020 |
_a9781439893753 _q(e-book: PDF) |
||
020 |
_z9781439893739 _q(hardback) |
||
020 |
_z9781138077058 _q(paperback) |
||
024 | 7 |
_a10.1201/b13005 _2doi |
|
035 | _a(OCoLC)822565427 | ||
050 | 4 |
_aTK7895.M4 _bS53 2013 |
|
082 | 0 | 4 |
_a004.53 _bS568 |
100 | 1 |
_aSiddiqi, Muzaffer A., _eauthor. _920003 |
|
245 | 1 | 0 |
_aDynamic RAM : _btechnology advancements / _cMuzaffer A. Siddiqi. |
264 | 1 |
_aBoca Raton, Fla. : _bCRC Press, _c2013. |
|
300 | _a1 online resource (xvii, 364 pages) | ||
505 | 0 | _a1. Random access memories -- 2. DRAM cell development -- 3. DRAM technologies -- 4. Advanced DRAM cell transistors -- 5. Storage capacitor enhancement techniques -- 6. Advanced DRAM technologies -- 7. Leakages in DRAMs -- 8. Memory peripheral circuits. | |
520 |
_aDynamic RAM (DRAM) has wide applications in the computer industry, telecommunications, the military, and the space industry. This book presents an up-to-date account of the theory and design of DRAM, the workhorse of all semiconductor memories. It summarizes the development of and recent advances in manufacturing technology, generation by generation. The text also addresses DRAM cell development capacitor enhancement technologies, different types of leakages, and the circuit and technological aspects of the remedial measures taken-- _cProvided by publisher. |
||
650 | 0 |
_aSemiconductor storage devices. _913974 |
|
650 | 0 |
_aRandom access memory. _920004 |
|
776 | 0 | 8 |
_iPrint version: _z9781439893739 _w(DLC) 2012030359 |
856 | 4 | 0 |
_uhttps://www.taylorfrancis.com/books/9781315216690 _zClick here to view. |
942 | _cEBK | ||
999 |
_c72253 _d72253 |