000			02177nmm a2200373Ia 4500
001			00010027
003			WSP
005			20220711214112.0
007			cr |uu|||uu|||
008			190115s2017 si a ob 001 0 eng
010			_z 2016032951
040			_aWSPC _beng _cWSPC
020			_a9789813109414 _q(ebook)
020			_z9789813109407 _q(hbk.)
050	0	4	_aTK7881.15 _b.B349 2017
072		7	_aTEC _x008000 _2bisacsh
072		7	_aTEC _x008090 _2bisacsh
082	0	4	_a621.31/7 _223
100	1		_aBaliga, B. Jayant, _d1948- _93613
245	1	0	_aGallium nitride and silicon carbide power devices _h[electronic resource] / _cB. Jayant Baliga.
260			_aSingapore : _bWorld Scientific Publishing Co. Pte Ltd., _c©2017.
300			_a1 online resource (592 p.) : _bill.
538			_aSystem requirements: Adobe Acrobat Reader.
538			_aMode of access: World Wide Web.
588			_aTitle from web page (viewed January 16, 2019).
504			_aIncludes bibliographical references and index.
520			_a"During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies. This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities."-- _cPublisher's website.
650		0	_aPower electronics. _93614
650		0	_aGallium nitride _xElectric properties. _93615
650		0	_aSilicon carbide _xElectric properties. _93616
650		0	_aElectronic books. _920610
856	4	0	_uhttps://www.worldscientific.com/worldscibooks/10.1142/10027#t=toc _zAccess to full text is restricted to subscribers.
942			_cEBK
999			_c72477 _d72477