000 08357nam a2200577 i 4500
001 6542360
003 IEEE
005 20220712205849.0
006 m o d
007 cr |n|||||||||
008 151222s2012 njua ob 001 eng d
020 _a9783527665709
_qebook
020 _z9783527409150
_qprint
020 _z3527665706
_qelectronic
020 _z3527665730
_qelectronic
020 _z9783527665730
_qelectronic
024 7 _a10.1002/9783527665709
_2doi
035 _a(CaBNVSL)mat06542360
035 _a(IDAMS)0b00006481da1aa4
040 _aCaBNVSL
_beng
_erda
_cCaBNVSL
_dCaBNVSL
050 4 _aTK7871
_b.B75 2010eb
100 1 _aBrillson, L. J.,
_eauthor.
_928231
245 1 0 _aSurfaces and interfaces of electronic materials /
_cby Leonard J. Brillson.
264 1 _aWeinheim :
_bWiley-VCH :
_bIEEE,
_c[2010]
264 2 _a[Piscataqay, New Jersey] :
_bIEEE Xplore,
_c[2012]
300 _a1 PDF (xvii, 570 pages) :
_billustrations (some color).
336 _atext
_2rdacontent
337 _aelectronic
_2isbdmedia
338 _aonline resource
_2rdacarrier
490 1 _aWiley - IEEE
504 _aIncludes bibliographical references and index.
505 0 _aPreface XVII -- 1 Introduction 1 -- 1.1 Surface and Interfaces in Everyday Life 1 -- 1.2 Surfaces and Interfaces in Electronics Technology 2 -- 2 Historical Background 9 -- 2.1 Contact Electrification and the Development of Solid-State Concepts 9 -- 2.2 High-Purity Semiconductor Crystals 10 -- 2.3 Development of the Transistor 10 -- 2.4 The Surface Science Era 12 -- 2.5 Advances in Crystal Growth Techniques 13 -- 2.6 Future Electronics 15 -- 3 Electrical Measurements 19 -- 3.1 Schottky Barrier Overview 19 -- 3.2 Ideal Schottky Barriers 20 -- 3.3 Real Schottky Barriers 22 -- 3.4 Schottky Barrier Height Measurements 25 -- 3.5 Summary 33 -- 4 Interface States 37 -- 4.1 Interface State Models 37 -- 4.2 Simple Model Calculation of Electronic Surface States 39 -- 4.3 Intrinsic Surface States 42 -- 4.4 Extrinsic Surface States 52 -- 4.5 Chapter Summary 62 -- 5 Ultrahigh Vacuum Technology 67 -- 5.1 Ultrahigh Vacuum Vessels 67 -- 5.2 Pumps 70 -- 5.3 Specimen Manipulators 76 -- 5.4 Gauges 76 -- 5.5 Deposition Sources 77 -- 5.6 Deposition Monitors 79 -- 5.7 Summary 80 -- 6 Surface and Interface Analysis 83 -- 6.1 Surface and Interface Techniques 83 -- 6.2 Excited Electron Spectroscopies 85 -- 6.3 Principles of Surface Sensitivity 88 -- 6.4 Surface Analytic and Processing Chambers 89 -- 6.5 Summary 92 -- 7 Photoemission Spectroscopy 93 -- 7.1 The Photoelectric Effect 93 -- 7.2 The Optical Excitation Process 95 -- 7.3 Photoionization Cross Section 95 -- 7.4 Density of States 96 -- 7.5 Experimental Spectrum 96 -- 7.6 Experimental Energy Distribution Curves 97 -- 7.7 Measured Photoionization Cross Sections 100 -- 7.8 Principles of X-ray Photoelectron Spectroscopy 112 -- 7.9 Excitation Sources 119 -- 7.10 Electron Energy Analyzers 122 -- 7.11 Summary 125 -- 8 Photoemission with Soft X-rays 129 -- 8.1 Soft X-ray Spectroscopy Techniques 129 -- 8.2 Synchrotron Radiation Sources 129 -- 8.3 Soft X-Ray Photoemission Spectroscopy 132 -- 8.4 Related Soft X-ray Techniques 141 -- 8.5 Summary 143.
505 8 _a9 Particle-Solid Scattering 147 -- 9.1 Overview 147 -- 9.2 Scattering Cross Section 147 -- 9.3 Electron Beam Spectroscopies 151 -- 9.4 Auger Electron Spectroscopy 153 -- 9.5 Auger Depth Profiling 163 -- 10 Electron Energy Loss Spectroscopy 169 -- 10.1 Overview 169 -- 10.2 Dielectric Response Theory 171 -- 10.3 Surface Phonon Scattering 172 -- 10.4 Bulk and Surface Plasmon Scattering 174 -- 10.5 Interface Electronic Transitions 177 -- 10.6 Atomic-Scale Electron Energy Loss Spectroscopy 180 -- 10.7 Summary 181 -- 11 Rutherford Backscattering Spectrometry 183 -- 11.1 Overview 183 -- 11.2 Theory of Rutherford Backscattering 184 -- 11.3 Depth Profiling 187 -- 11.4 Channeling and Blocking 190 -- 11.5 Interface Studies 192 -- 11.6 Summary 195 -- 12 Secondary Ion Mass Spectrometry 197 -- 12.1 Overview 197 -- 12.2 Principles 197 -- 12.3 SIMS Equipment 199 -- 12.4 Secondary Ion Yields 203 -- 12.5 Imaging 206 -- 12.6 Dynamic SIMS 207 -- 12.7 Organic and Biological Species 211 -- 12.8 Summary 211 -- 13 Electron Diffraction 213 -- 13.1 Overview 213 -- 13.2 Principles of Low-Energy Electron Diffraction 213 -- 13.3 LEED Equipment 215 -- 13.4 LEED Kinematics 216 -- 13.5 Surface Reconstruction 217 -- 13.6 Surface Lattices and Superstructures 219 -- 13.7 Silicon Reconstructions 221 -- 13.8 III-V Compound Semiconductor Reconstructions 223 -- 13.9 Reflection High-Energy Electron Diffraction 227 -- 13.8.1 RHEED Oscillations 232 -- 13.9 Summary 233 -- 14 Scanning Tunneling Microscopy 237 -- 14.1 Overview 237 -- 14.2 Tunneling Theory 239 -- 14.3 Surface Structure 244 -- 14.4 Atomic Force Microscopy 246 -- 14.5 Ballistic Electron Emission Microscopy 249 -- 14.6 Atomic Positioning 252 -- 14.7 Summary 253 -- 15 Optical Spectroscopies 257 -- 15.1 Overview 257 -- 15.2 Optical Absorption 257 -- 15.3 Modulation Techniques 260 -- 15.4 Multiple Surface Interaction Techniques 262 -- 15.5 Spectroscopic Ellipsometry 263 -- 15.6 Surface-Enhanced Raman Spectroscopy 264 -- 15.7 Surface Photoconductivity 267.
505 8 _a15.8 Surface Photovoltage Spectroscopy 268 -- 15.9 Summary 276 -- 16 Cathodoluminescence Spectroscopy 279 -- 16.1 Overview 279 -- 16.2 Theory 281 -- 16.3 Monte Carlo Simulations 291 -- 16.4 Depth-Resolved Cathodoluminescence Spectroscopy 293 -- 16.5 Summary 302 -- 17 Electronic Materials' Surfaces 305 -- 17.1 Overview 305 -- 17.2 Geometric Structure 305 -- 17.3 Chemical Structure 311 -- 17.4 Etching 318 -- 17.5 Electronic Implications 323 -- 17.6 Summary 323 -- 18 Adsorbates on Electronic Materials' Surfaces 327 -- 18.1 Overview 327 -- 18.2 Geometric Structure 327 -- 18.3 Chemical Properties 336 -- 18.4 Electronic Properties 346 -- 18.5 Summary 356 -- 19 Adsorbate-Semiconductor Sensors 365 -- 19.1 Adsorbate-Surface Charge Transfer 365 -- 19.2 Sensors 370 -- 19.3 Summary 379 -- 20 Semiconductor Heterojunctions 383 -- 20.1 Overview 383 -- 20.2 Geometric Structure 383 -- 20.3 Chemical Structure 397 -- 20.4 Electronic Structure 402 -- 20.5 Summary 439 -- 21 Metals on Semiconductors 447 -- 21.1 Overview 447 -- 21.2 Metal-Semiconductor Interface Dipoles 448 -- 21.3 Interface States 449 -- 21.4 Self-Consistent Electrostatic Calculations 467 -- 21.5 Fermi-Level Pinning Models 471 -- 21.6 Experimental Schottky Barriers 471 -- 21.7 Interface Passivation and Control 492 -- 21.8 Summary 514 -- 22 The Future of Interfaces 523 -- 22.1 Current Status 523 -- 22.2 Current Device Applications and Challenges 525 -- 22.3 New Directions 528 -- 22.4 Synopsis 536 -- Appendices 539 -- Appendix 1: Glossary of Commonly Used Symbols 541 -- Appendix 2: Table of Acronyms 544 -- Appendix 3: Table of Physical Constants and Conversion Factors 548 -- Appendix 4: Semiconductor Properties 549 -- Appendix 5: Table of Preferred Work Functions 551 -- Appendix 6: Derivation of Fermi's Golden Rule 552 -- Appendix 7: Derivation of Photoemission Cross Section for a Square Well 555 -- Index 557.
506 1 _aRestricted to subscribers or individual electronic text purchasers.
520 _aAn advanced level textbook covering geometric, chemical, and electronic structure of electronic materials, and their applications to devices based on semiconductor surfaces, metal-semiconductor interfaces, and semiconductor heterojunctions.Starting with the fundamentals of electrical measurements on semiconductor interfaces, it then describes the importance of controlling macroscopic electrical properties by atomic-scale techniques.
530 _aAlso available in print.
538 _aMode of access: World Wide Web
588 _aDescription based on PDF viewed 12/22/2015.
650 0 _aSurfaces (Technology)
_xAnalysis.
_96442
650 0 _aSpectrum analysis.
_911993
650 0 _aElectronics
_xMaterials.
_98018
650 0 _aSemiconductors
_xMaterials.
_96444
655 0 _aElectronic books.
_93294
710 2 _aIEEE Xplore (Online Service),
_edistributor.
_928232
710 2 _aWiley,
_epublisher.
_928233
776 0 8 _iPrint version:
_z9783527409150
830 0 _aWiley - IEEE
_97628
856 4 2 _3Abstract with links to resource
_uhttps://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=6542360
942 _cEBK
999 _c74308
_d74308