000 04432nam a2200685 i 4500
001 7394658
003 IEEE
005 20220712205925.0
006 m o d
007 cr |n|||||||||
008 160307s2008 njua ob 001 eng d
019 _a932097299
020 _a9781119132639
_qelectronic bk.
020 _z9781119132608
_qprint
020 _z9781119132615
_qelectronic bk.
020 _z1119132614
_qelectronic bk.
020 _z9781119132622
_qelectronic bk.
020 _z1119132622
_qelectronic bk.
020 _z1119132630
_qelectronic bk.
020 _z1119132606
024 7 _a10.1002/9781119132639
_2doi
035 _a(CaBNVSL)mat07394658
035 _a(IDAMS)0b00006484bd885f
040 _aCaBNVSL
_beng
_erda
_cCaBNVSL
_dCaBNVSL
050 4 _aTK7895.M4
_bA75 2016eb
082 0 4 _a004.5
_223
100 1 _aAritome, Seiichi,
_eauthor.
_928766
245 1 0 _aNAND flash memory technologies /
_cSeiichi Aritome.
264 1 _aHoboken, New Jersey :
_bWiley,
_c[2016]
264 2 _a[Piscataqay, New Jersey] :
_bIEEE Xplore,
_c[2015]
300 _a1 PDF (xx, 410 pages) :
_billustrations.
336 _atext
_2rdacontent
337 _aelectronic
_2isbdmedia
338 _aonline resource
_2rdacarrier
490 1 _aIEEE press series on microelectronic systems
504 _aIncludes bibliographical references and index.
505 0 _aPrinciple of NAND flash memory -- NAND flash memory devices -- Advanced operation for multilevel cell -- Scaling challenge of NAND flash memory cells -- Reliability of NAND flash memory -- Three-dimensional NAND flash cell -- Challenges of NAND flash memory.
506 1 _aRestricted to subscribers or individual electronic text purchasers.
520 _aExamines the history, basic structure, and processes of NAND flash memory This book discusses basic and advanced NAND flash memory technologies, including the principle of NAND flash, memory cell technologies, multi-bits cell technologies, scaling challenges of memory cell, reliability, and 3-dimensional cell as the future technology. Chapter 1 describes the background and early history of NAND flash. The basic device structures and operations are described in Chapter 2. Next, the author discusses the memory cell technologies focused on scaling in Chapter 3, and introduces the advanced operations for multi-level cells in Chapter 4. The physical limitations for scaling are examined in Chapter 5, and Chapter 6 describes the reliability of NAND flash memory. Chapter 7 examines 3-dimensional (3D) NAND flash memory cells and discusses the pros and cons in structure, process, operations, scalability, and performance. In Chapter 8, challenges of 3D NAND flash memory are discussed. Finally, in Chapter 9, the author summarizes and describes the prospect of technologies and market for the future NAND flash memory. . Offers a comprehensive overview of NAND flash memories, with insights into NAND history, technology, challenges, evolutions, and perspectives. Describes new program disturb issues, data retention, power consumption, and possible solutions for the challenges of 3D NAND flash memory . Written by an authority in NAND flash memory technology, with over 25 years' experience NAND Flash Memory Technologies is a reference for engineers, researchers, and designers who are engaged in the development of NAND flash memory or SSD (Solid State Disk) and flash memory systems.
530 _aAlso available in print.
538 _aMode of access: World Wide Web
588 0 _aOnline resource; title from PDF title page (EBSCO, viewed December 22, 2015)
650 0 _aFlash memories (Computers)
_926120
650 0 _aComputer storage devices.
_95655
650 7 _aComputer storage devices.
_2fast
_95655
650 7 _aFlash memories (Computers)
_2fast
_926120
655 4 _aElectronic books.
_93294
695 _aEpitaxial layers
695 _aExcitons
695 _aNitrogen
695 _aRadiative recombination
695 _aSilicon carbide
695 _aTemperature measurement
710 2 _aIEEE Xplore (Online Service),
_edistributor.
_928767
710 2 _aWiley,
_epublisher.
_928768
776 0 8 _iPrint version:
_z1119132606
_z9781119132608
_w(OCoLC)911171852
830 0 _aIEEE Press series on microelectronic systems.
_96746
856 4 2 _3Abstract with links to resource
_uhttps://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=7394658
942 _cEBK
999 _c74434
_d74434