000 03304nam a22005415i 4500
001 978-3-319-49962-8
003 DE-He213
005 20220801214358.0
007 cr nn 008mamaa
008 161230s2017 sz | s |||| 0|eng d
020 _a9783319499628
_9978-3-319-49962-8
024 7 _a10.1007/978-3-319-49962-8
_2doi
050 4 _aTK7800-8360
072 7 _aTJF
_2bicssc
072 7 _aTEC008000
_2bisacsh
072 7 _aTJF
_2thema
082 0 4 _a621.381
_223
100 1 _aMargarit, Josep Maria.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_938020
245 1 0 _aLow-Power CMOS Digital Pixel Imagers for High-Speed Uncooled PbSe IR Applications
_h[electronic resource] /
_cby Josep Maria Margarit.
250 _a1st ed. 2017.
264 1 _aCham :
_bSpringer International Publishing :
_bImprint: Springer,
_c2017.
300 _aXXI, 173 p. 105 illus., 4 illus. in color.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
490 1 _aSpringer Theses, Recognizing Outstanding Ph.D. Research,
_x2190-5061
505 0 _aIntroduction -- Frame-Based Smart IR Imagers -- Frame-Free Compact-Pitch IR Imagers -- Pixel Test Chips in 0.35mm and 0.15mm CMOS Technologies -- Imager Test Chips in 2.5mm, 0.35mm and 0.15mm CMOS Technologies -- Conclusions.
520 _aThis book describes the development of a new low-cost medium wavelength IR (MWIR) monolithic imager technology for high-speed uncooled industrial applications. It takes the baton on the latest technological advances in the field of vapor phase deposition (VPD) PbSe-based MWIR detection accomplished by the industrial partner NIT S.L., adding fundamental knowledge on the investigation of novel VLSI analog and mixed-signal design techniques at circuit and system levels for the development of the readout integrated device attached to the detector. In order to fulfill the operational requirements of VPD PbSe, this work proposes null inter-pixel crosstalk vision sensor architectures based on a digital-only focal plane array (FPA) of configurable pixel sensors. Each digital pixel sensor (DPS) cell is equipped with fast communication modules, self-biasing, offset cancellation, analog-to-digital converter (ADC) and fixed pattern noise (FPN) correction. In-pixel power consumption is minimized by the use of comprehensive MOSFET subthreshold operation.
650 0 _aElectronics.
_93425
650 0 _aCondensed matter.
_917064
650 0 _aComputer vision.
_938021
650 1 4 _aElectronics and Microelectronics, Instrumentation.
_932249
650 2 4 _aCondensed Matter Physics.
_914649
650 2 4 _aComputer Vision.
_938022
710 2 _aSpringerLink (Online service)
_938023
773 0 _tSpringer Nature eBook
776 0 8 _iPrinted edition:
_z9783319499611
776 0 8 _iPrinted edition:
_z9783319499635
776 0 8 _iPrinted edition:
_z9783319842851
830 0 _aSpringer Theses, Recognizing Outstanding Ph.D. Research,
_x2190-5061
_938024
856 4 0 _uhttps://doi.org/10.1007/978-3-319-49962-8
912 _aZDB-2-ENG
912 _aZDB-2-SXE
942 _cEBK
999 _c76282
_d76282