000 | 04727cam a2200529 a 4500 | ||
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001 | on1129181864 | ||
003 | OCoLC | ||
005 | 20230516165837.0 | ||
006 | m o d | ||
007 | cr un|---aucuu | ||
008 | 191130s2020 ne ob 001 0 eng d | ||
040 |
_aEBLCP _beng _epn _cEBLCP _dOPELS _dOCLCF _dAU@ _dOCLCQ _dCOM _dOCLCO _dOCLCQ |
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019 | _a1139742820 | ||
020 | _a9780081021552 | ||
020 | _a0081021550 | ||
020 |
_z9780081021545 _q(print) |
||
035 |
_a(OCoLC)1129181864 _z(OCoLC)1139742820 |
||
050 | 4 | _aTK7874.887 | |
082 | 0 | 4 |
_a621.3 _223 |
245 | 0 | 0 |
_aSpintronic 2D materials : _bfundamentals and applications / _cedited by Wenqing Liu and Yongbing Xu. |
260 |
_aAmsterdam, Netherlands : _bElsevier, _c�2020. |
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300 | _a1 online resource (322 pages) | ||
336 |
_atext _btxt _2rdacontent |
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337 |
_acomputer _bc _2rdamedia |
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338 |
_aonline resource _bcr _2rdacarrier |
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490 | 0 | _aMaterials Today | |
588 | 0 | _aPrint version record. | |
505 | 0 | _aFront Cover; Spintronic 2D Materials; Copyright Page; Contents; List of contributors; Preface; 1 Introduction to spintronics and 2D materials; 1.1 Spin and spin ordering; 1.2 The discovery of giant magnetoresistance and tunnelling magnetoresistance; 1.3 Semiconductor spintronics: dilute magnetic semiconductor and spin field-effect transistor; 1.4 2D materials and magnetism in 2D materials; 1.5 Overview of this book; References; 2 Rashba spin-orbit coupling in two-dimensional systems; 2.1 The origin of Rashba spin-orbit coupling; 2.1.1 From Dirac to Pauli ... ; 2.1.2 ... and back again | |
505 | 8 | _a2.1.3 Spin-splitting in semiconducting quantum wells2.1.4 Metallic surfaces; 2.1.5 Induced Rashba spin-orbit coupling; 2.1.6 Topological insulators; 2.1.7 Topological semimetals; 2.2 Fundamental signatures; 2.2.1 Energy dispersion and spin texture; 2.2.2 Electron dipole spin resonance; 2.2.3 Quantum oscillations; 2.2.4 Weak antilocalization; 2.3 Spin-orbit transport; 2.3.1 Spin-charge conversion effects; 2.3.2 Persistent spin helix; 2.3.3 Spin and charge pumping; 2.3.4 Zitterbewegung effect; 2.3.5 Quantum anomalous Hall and magnetoelectric effects | |
505 | 8 | _a2.3.6 Floquet physics in spin-orbit coupled systems2.4 Rashba devices; 2.4.1 Aharonov-Casher interferometer; 2.4.2 Datta-Das spin field-effect transistor; 2.4.3 Spin-orbit torques devices; 2.4.4 Spin-orbit Qubits; 2.5 Outlook and conclusion; References; 3 Two-dimensional ferrovalley materials; 3.1 Valleytronics in 2D hexagonal lattices; 3.2 Valley polarization induced by external fields; 3.3 Ferrovalley materials with spontaneous valley polarization; 3.3.1 VSe2-Ferrovalley materials induced by ferromagnetism; 3.3.2 Bilayer VSe2-antiferrovalley materials | |
505 | 8 | _a3.3.3 GeSe-Ferrovalley materials induced by ferroelectricity3.4 Summary and outlook; References; 4 Ferromagnetism in two-dimensional materials via doping and defect engineering; 4.1 Introduction; 4.2 Ferromagnetism in graphene; 4.3 Ferromagnetism in boron nitride; 4.4 Ferromagnetism in phosphorene; 4.5 Ferromagnetism of transition-metal dichalcogenide: MoS2; 4.6 Ferromagnetism in two-dimensional metal oxide: SnO; 4.7 Conclusion and prospective; References; 5 Charge-spin conversion in 2D systems; 5.1 Overview; 5.2 Introduction; 5.3 Spin generation; 5.3.1 Spin-polarized charge current | |
505 | 8 | _a5.3.2 Spin injection into nonmagnetic materials5.3.3 Pure spin current; 5.4 Spin detection; 5.4.1 Spin accumulation voltage; 5.4.2 Inverse spin Hall effect; 5.4.3 Magnetoresistance; 5.5 Outlook; 5.5.1 New materials and heterostructures; 5.5.2 New techniques and characterizations; 5.5.3 New device architectures and functionalities; References; 6 Magnetic properties of graphene; 6.1 Significance of magnetic graphene; 6.2 Primary theory of magnetism of graphene-Lieb's theorem; 6.3 General methods for inducing localized magnetic moments in graphene; 6.3.1 Vacancy approach; 6.3.2 Edge approach | |
500 | _a6.3.2.1 Graphene quantum dots | ||
500 | _aIncludes index. | ||
504 | _aIncludes bibliographical references and index. | ||
650 | 0 |
_aSpintronics. _96964 |
|
650 | 0 |
_aMaterials. _97549 |
|
650 | 6 |
_a�Electronique de spin. _0(CaQQLa)201-0359169 _968519 |
|
650 | 6 |
_aMat�eriaux. _0(CaQQLa)201-0025866 _964418 |
|
650 | 7 |
_aMaterials. _2fast _0(OCoLC)fst01011772 _97549 |
|
650 | 7 |
_aSpintronics. _2fast _0(OCoLC)fst01129994 _96964 |
|
700 | 1 |
_aLiu, Wenqing. _968520 |
|
700 | 1 |
_aXu, Yongbing. _968521 |
|
776 | 0 | 8 |
_iPrint version: _aXu, Yongbing. _tSpintronic 2D Materials : Fundamentals and Applications. _dSan Diego : Elsevier, �2019 _z9780081021545 |
856 | 4 | 0 |
_3ScienceDirect _uhttps://www.sciencedirect.com/science/book/9780081021545 |
942 | _cEBK | ||
999 |
_c82389 _d82389 |