Reliability wearout mechanisms in advanced CMOS technologies / (Record no. 59604)
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| 000 -LEADER | |
|---|---|
| fixed length control field | 03315nam a2200889 i 4500 |
| 001 - CONTROL NUMBER | |
| control field | 5361029 |
| 005 - DATE AND TIME OF LATEST TRANSACTION | |
| control field | 20200421114117.0 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 110519t20152009njua ob 001 0 eng d |
| 015 ## - NATIONAL BIBLIOGRAPHY NUMBER | |
| -- | 015-17502 (print) |
| 015 ## - NATIONAL BIBLIOGRAPHY NUMBER | |
| -- | GBA944641 (print) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| -- | paper |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| -- | electronic |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 9780470455265 |
| -- | electronic |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| -- | paper |
| 245 00 - TITLE STATEMENT | |
| Title | Reliability wearout mechanisms in advanced CMOS technologies / |
| 300 ## - PHYSICAL DESCRIPTION | |
| Number of Pages | 1 PDF (xv, 624 pages) : |
| 490 1# - SERIES STATEMENT | |
| Series statement | IEEE Press series on microelectronic systems ; |
| 505 0# - FORMATTED CONTENTS NOTE | |
| Remark 2 | Introduction / Alvin W. Strong -- Dielectric characterization and reliability methodology / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Su�n�e -- Dielectric breakdown of gate oxides: physics and experiments / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Su�n�e -- Negative bias temperature instabilities in pMOSFET devices / Giuseppe LaRosa -- Hot carriers / Stewart E. Rauch, III -- Stress-induced voiding / Timothy D. Sullivan -- Electromigration / Timothy D. Sullivan. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| General subdivision | Reliability. |
| 700 1# - AUTHOR 2 | |
| Author 2 | Strong, Alvin Wayne, |
| 856 42 - ELECTRONIC LOCATION AND ACCESS | |
| Uniform Resource Identifier | http://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=5361029 |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
| Koha item type | eBooks |
| 264 #1 - | |
| -- | Piscataway, New Jersey : |
| -- | IEEE Press, |
| -- | c2009. |
| 336 ## - | |
| -- | text |
| -- | rdacontent |
| 337 ## - | |
| -- | electronic |
| -- | isbdmedia |
| 338 ## - | |
| -- | online resource |
| -- | rdacarrier |
| 588 ## - | |
| -- | Description based on PDF viewed 12/18/2015. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Metal oxide semiconductors, Complementary |
| 695 ## - | |
| -- | Wires |
| 695 ## - | |
| -- | Stress |
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| -- | Substrates |
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| -- | Transistors |
| 695 ## - | |
| -- | Silicon |
| 695 ## - | |
| -- | Strain |
| 695 ## - | |
| -- | Nitrogen |
| 695 ## - | |
| -- | Reliability |
| 695 ## - | |
| -- | Reliability engineering |
| 695 ## - | |
| -- | MOSFET circuits |
| 695 ## - | |
| -- | Materials |
| 695 ## - | |
| -- | Metallization |
| 695 ## - | |
| -- | Interface states |
| 695 ## - | |
| -- | Junctions |
| 695 ## - | |
| -- | Logic gates |
| 695 ## - | |
| -- | Force |
| 695 ## - | |
| -- | Hot carriers |
| 695 ## - | |
| -- | Indexes |
| 695 ## - | |
| -- | Electric breakdown |
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| -- | Electromigration |
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| -- | Electron traps |
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| -- | Degradation |
| 695 ## - | |
| -- | Dielectrics |
| 695 ## - | |
| -- | CMOS integrated circuits |
| 695 ## - | |
| -- | CMOS technology |
| 695 ## - | |
| -- | Charge carrier processes |
| 695 ## - | |
| -- | Atomic measurements |
| 695 ## - | |
| -- | Books |
| 695 ## - | |
| -- | Acceleration |
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