Reliability wearout mechanisms in advanced CMOS technologies / Alvin W. Strong ... [et al.].
Contributor(s): Strong, Alvin Wayne | Wiley [publisher.] | IEEE Xplore (Online Service) [distributor.].
Material type:
BookSeries: IEEE Press Series on Microelectronic Systems: 12Publisher: Piscataway, New Jersey : IEEE Press, c2009Description: 1 PDF (xv, 624 pages) : illustrations.Content type: text Media type: electronic Carrier type: online resourceISBN: 9780470455265.Subject(s): Metal oxide semiconductors, Complementary -- Reliability | Wires | Stress | Substrates | Transistors | Silicon | Strain | Nitrogen | Reliability | Reliability engineering | MOSFET circuits | Materials | Metallization | Interface states | Junctions | Logic gates | Force | Hot carriers | Indexes | Electric breakdown | Electromigration | Electron traps | Degradation | Dielectrics | CMOS integrated circuits | CMOS technology | Charge carrier processes | Atomic measurements | Books | AccelerationGenre/Form: Electronic books.Additional physical formats: Print version:: No titleOther classification: ELT 358f | ZN 4960 Online resources: Abstract with links to resource Includes bibliographical references and index.
Introduction / Alvin W. Strong -- Dielectric characterization and reliability methodology / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Su�n�e -- Dielectric breakdown of gate oxides: physics and experiments / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Su�n�e -- Negative bias temperature instabilities in pMOSFET devices / Giuseppe LaRosa -- Hot carriers / Stewart E. Rauch, III -- Stress-induced voiding / Timothy D. Sullivan -- Electromigration / Timothy D. Sullivan.
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